收藏本站
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.9
0.8
-100
*Notes:
1. V GS = 0V
2. I D = 1mA
-50 0 50 100 150
o
200
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 23.5A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
50
100
100 μ s
10 μ s
40
10
1
10ms
Operation in This Area
is Limited by R DS(on)
DC
1ms
30
20
*Notes:
1. T C = 25 C
2. T J = 150 C
0.1
o
o
10
T C , Case Temperature [ C ]
0.01
1
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
0
25
50 75 100 125
o
150
Figure 11. Transient Thermal Response Curve
1
0.5
0.1
0.2
0.1
P DM
0.01
0.05
0.02
0.01
*Notes:
t 1
t 2
1. Z θ JC (t) = 0.24 C/W Max.
Single pulse
o
2. Duty Factor, D = t 1 /t 2
10
10
10
10
10
1
0.001
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1
10
1 ,
Rectangular Pulse Duration [sec]
?2010 Fairchild Semiconductor Corporation
FCH47N60N Rev. C4
4
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FCH76N60NF MOSFET N-CH 600V 72.8A TO247-3
FCH76N60N MOSFET N-CH 600V 76A TO-247
FCI25N60N MOSFET N-CH 600V 25A I2PAK
FCI7N60 MOSFET N-CH 600V 7A I2PAK
FCLF8522P2BTL COPPER SFP TXRX 1.25GB/S
FCN10785_LE1-REC LENS FOR LEDENGIN
FCN10890_LR1-W LENS FOR LUXEON REBEL
FCN11107_LD1-O-90 LENS FOR OSRAM OS DIAMOND DRAGON
相关代理商/技术参数
FCH47N60N_1112 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FCH47N60NF 功能描述:MOSFET 600V N-Chan MOSFET FRFET, SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH76N60N 功能描述:MOSFET 600V N-Chan MOSFET SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCH76N60N_1112 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FCH76N60NF 功能描述:MOSFET 600V N-Chan MOSFET FRFET, SupreMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCHC10-100K-RC 制造商:ALLIED 制造商全称:Allied Components International 功能描述:Ferrite Core Chip Inductors High Current
FCHC10-150K-RC 制造商:ALLIED 制造商全称:Allied Components International 功能描述:Ferrite Core Chip Inductors High Current
FCHC10-1R0K-RC 制造商:ALLIED 制造商全称:Allied Components International 功能描述:Ferrite Core Chip Inductors High Current